研究目的
Investigating the influences of different substrates on the growth rate, composition, structural and electrical properties of CdZnTe films.
研究成果
CdZnTe films deposited on polished CdZnTe films substrates show larger grain size, higher crystalline quality, i.e. lower micro-stress and dislocation density, better structural homogeneity and integrity. The growth rate of the CdZnTe film on the polished CdZnTe film substrate is faster. The higher Zn content and lower leakage current was obtained for the CdZnTe film prepared on polished CdZnTe substrates. All the results indicated that the properties of CdZnTe films were affected by type of substrates and films prepared on polished CdZnTe substrates were more suitable for high energy particle detector applications.
研究不足
The biggest obstacle to the application of CdZnTe films to high energy particle detection is the poor film quality with a large number of defects.
1：Experimental Design and Method Selection:
CdZnTe films were prepared on polished CdZnTe film, Si and FTO substrates using the close spaced sublimation (CSS) method.
2：Sample Selection and Data Sources:
All substrates are 2 cm × 2 cm ×
3：22 cm in size. List of Experimental Equipment and Materials:
High-purity Cd
4：9Zn1Te powder (> 99999%) is used as the sublimation source. The distance between the sublimation source and substrates is 4 mm. Experimental Procedures and Operational Workflow:
The temperature of the sublimation source and substrates is set at 600 °C and 400 °C, respectively. The pressure atmosphere keeps at around
5：2 Pa. The growth time is 180 min. Data Analysis Methods:
The micro structure of the film is measured by X-ray diffraction (XRD). The surface morphology and the thickness of the films are analyzed by scanning electron microscopy (SEM). The composition of Zn is characterized by energy dispersive spectrometer (EDS). Raman scattering measurement is conducted at room temperature by Raman spectroscopy. Au electrodes are prepared on the surface of films by electron beam evaporation and the current-voltage (IeV) characteristics are measured by a Keithley 4200/SCS digital semiconductor characterization system.
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