研究目的
Investigating the effects of rapid thermal annealing (RTA) and microwave annealing (MWA) on the electrical properties of ZrO2 metal-insulator-metal (MIM) capacitors.
研究成果
MWA at 1400 W significantly improves the capacitance density of ZrO2 MIM capacitors by ~40% compared to un-annealed ones, with a lower leakage current density than RTA at equivalent conditions. MWA is suggested to be a more effective annealing technique for enhancing the electrical properties of ZrO2 MIM capacitors.
研究不足
The study focuses on the electrical properties of ZrO2 MIM capacitors under specific annealing conditions. The mechanisms behind the improved properties through MWA are proposed but not exhaustively proven.
1：Experimental Design and Method Selection:
The study compares the effects of RTA and MWA on ZrO2 MIM capacitors.
2：Sample Selection and Data Sources:
4 inch boron-doped p-type Si(100) wafers were used as substrates. ZrO2 dielectrics were deposited via Atomic Layer Deposition (ALD).
3：List of Experimental Equipment and Materials:
DSGI octagonal MWA chamber, RTA system, Agilent 4294A and Agilent B1500A equipments for measurements.
4：Experimental Procedures and Operational Workflow:
MIM capacitors were fabricated and annealed under different conditions (MWA at 700, 1400, 2100 W and RTA at 270, 370, 410 oC).
5：Data Analysis Methods:
Capacitance-voltage (C-V) and current-voltage (I-V) measurements were performed to analyze the electrical properties.
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