研究目的
Investigating the abnormal palladium diffusion into germanium (Ge) and its mechanism, including the electrical influence of palladium atoms in Ge and the formation of ohmic-like Schottky junctions.
研究成果
The study demonstrated abnormal Pd diffusion into Ge, induced by excess Ge atoms during palladium germanide alloy formation. This diffusion leads to the formation of ohmic-like Schottky junctions on both n- and p-type Ge. First-principle calculations and TCAD simulation revealed that Pd atoms in Ge induce midgap bulk-trap states, contributing to a severe increment of trap-assisted tunneling current.
研究不足
The study focuses on the specific conditions under which abnormal Pd diffusion occurs, and the findings may not be generalizable to all conditions. The role of enormous Pd atoms in the bulk and the exact mechanism of diffusion require further examination.
1：Experimental Design and Method Selection:
The study involved the formation of metal germanide/Ge Schottky junctions using various metals (Ni, Pd, Pt, Co) and postdeposition annealing (PDA) at 200–600 °C. First-principle calculations and TCAD simulation were used to evaluate the electrical influence of palladium atoms in Ge.
2：Sample Selection and Data Sources:
n-type Ge(100) substrate was used, cleaned using cyclic diluted fluoric acid. A SiO2 field oxide was deposited, and a metal contact region was defined using photolithography and wet etching.
3：List of Experimental Equipment and Materials:
Metals such as Ni, Pd, Pt, and Co were sputtered on top, and a 50-nm TiN capping layer was added. A rapid thermal annealing system was used for PDA.
4：Experimental Procedures and Operational Workflow:
Metal liftoff was performed, and PDA was conducted at 200–600 °C for 60 s. A bottom contact was established using a Ti/Al metal stack.
5：Data Analysis Methods:
The I–V characteristics were analyzed, and first-principle calculations and TCAD simulation were used to evaluate the electrical influence of palladium atoms in Ge.
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