研究目的
Investigating the higher indium incorporation in self-organized triangular nanoprisms at the edges of InGaN/GaN core-shell nanorods.
研究成果
The study illustrates a self-organized complex indium accumulation for thick InGaN shell layers grown on GaN nanorod core, with at least 4% higher indium concentration in the triangular shaped region compared to the m-plane sidewalls.
研究不足
The growth mechanism of the In-rich regions is complex and not fully understood, indicating that current explanations for their creation are incomplete.
1：Experimental Design and Method Selection:
The study combines low temperature cathodoluminescence (CL) spectroscopy with scanning transmission electron microscope (STEM) to correlate local optical and compositional structural properties with nanometer spatial resolution.
2：Sample Selection and Data Sources:
The three-dimensional InGaN/GaN core-shell nanorod array was produced by continuous-mode metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG) approach.
3：List of Experimental Equipment and Materials:
A scanning transmission electron microscope FEI (S)TEM Tecnai F20 was used for STEM analysis, and a liquid helium sample holder was employed for low temperature CL spectroscopy.
4：Experimental Procedures and Operational Workflow:
The nanorods were grown in a two-step process, followed by the deposition of an InGaN shell layer. CL spectroscopy was performed to analyze the local optical and structural properties.
5：Data Analysis Methods:
The generated cathodoluminescence was analyzed using a grating monochromator MonoCL4 (Gatan) and detected by a nitrogen cooled Si-CCD.
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