研究目的
To understand the donor deactivation phenomena and achieve a higher doping level in silicon by investigating the local atomic structure of As deactivation centers.
研究成果
The major As-deactivation complex in the Si bulk region involves a h111i-directed AsSi-VSi complex, while in the Si/SiO2 interface region, the dominant species involves Asi, possibly with an accompanying Sii. The study provides insights into the atomic structures of As defect complexes in heavily doped Si.
研究不足
The study focuses on heavily As-doped Si and may not be directly applicable to other doping levels or materials. The identification of specific As deactivation complexes in the interface region remains challenging.
1：Experimental Design and Method Selection:
Heavily As-doped Si samples were fabricated by implanting 2 × 10^15 As/cm^2 at 2 keV and annealed under three different conditions. The local atomic structure of As defect complexes was investigated using channeling and blocking TOF-MEIS experiments.
2：Sample Selection and Data Sources:
Samples were prepared by implanting As into Si and annealed under different conditions to study the effects on As deactivation.
3：List of Experimental Equipment and Materials:
TOF-MEIS (MEIS-K120, K-MAC, Korea) with incident ions of 100 keV He+ was used for measurements.
4：Experimental Procedures and Operational Workflow:
Random and channeling MEIS spectra were acquired with a 45° incident angle in the 90° scattering angle. The compositional depth profiles were analyzed with the random spectrum, and the crystallinity of each element was analyzed by comparing the random and the channeling spectra.
5：Data Analysis Methods:
The measured spectra are decomposed as a function of the depth using the Andersen cross-section, the Andersen-Ziegler stopping, and the Chu straggling techniques.
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