研究目的
To study the temperature dependent current-voltage (I-V-T) characteristics of AlN/Si heterojunctions to understand the transport of charge carriers and their recombination at the AlN (0002)/Si (111) interface.
研究成果
The study revealed a temperature dependent turn-on voltage and Schottky barrier height in AlN/Si heterojunctions, attributed to the presence of trap states at the interface. The electrical transport mechanism was dominated by tunneling at low temperatures and space charge limited current at higher voltages. The findings are significant for the design and reliability of AlN/Si based electronic and optoelectronic devices.
研究不足
The study is limited by the high density of trap states at the AlN/Si interface, which affects the electrical transport properties. The temperature range was from 100 to 400 K, and the study did not explore higher temperatures.
1：Experimental Design and Method Selection:
The study involved the analysis of temperature dependent current-voltage (I-V-T) characteristics of AlN/Si heterojunctions. The samples were cleaned and thermally treated under nitrogen plasma.
2：Sample Selection and Data Sources:
The samples used were c-axis oriented 200 nm thick un-doped AlN templates on n-Si (111) substrates.
3：List of Experimental Equipment and Materials:
Equipment included a Hall system for carrier concentration estimation, X-ray diffractometer for crystallinity examination, Raman spectrometer, FESEM, AFM, XPS instrument, and a thermal evaporation system for electrode fabrication.
4：Experimental Procedures and Operational Workflow:
The samples were cleaned and thermally treated. Electrical contacts were made using a metallic stack. I-V-T characteristics were measured from 100 to 400 K.
5：Data Analysis Methods:
The I-V curves were analyzed to determine turn-on voltage, barrier height, and ideality factor. The log-log plot of I-V characteristics was used to identify different carrier transport mechanisms.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
