研究目的
To improve interfacial and electrical properties of metal–oxide–semiconductor structures based on GaSb by studying the Al2O3/GaSb interface using x-ray photoelectron spectroscopy.
研究成果
The O2 plasma post atomic layer deposition process reduces the interface oxidation after post deposition annealing by limiting diffusion of oxygen species, creating an oxygen-rich layer within the Al2O3 at the interface. This process improves the quality of the oxide/semiconductor interface.
研究不足
The study is limited by the specific passivation and treatment conditions used, and the focus on the Al2O3/GaSb interface. The effects of longer exposure to air or different passivation concentrations were not explored.
1：Experimental Design and Method Selection:
The study involved passivating GaSb surfaces with NH4OH or (NH4)2S solutions, followed by an O2 plasma post atomic layer deposition process and post deposition annealing at different temperatures. X-ray photoelectron spectroscopy was used to analyze the effects.
2：Sample Selection and Data Sources:
Epitaxial layers were grown by gas source molecular beam epitaxy on a GaAs substrate, consisting of a GaSb buffer layer and highly Si-doped p-type GaSb layers.
3：List of Experimental Equipment and Materials:
Samples were treated with NH4OH or HCl/(NH4)2S solutions, followed by ALD deposition of Al2O3 and O2 plasma treatment. XPS measurements were performed using a monochromatized Al Kα radiation.
4：Experimental Procedures and Operational Workflow:
Samples were degreased, passivated, and then subjected to ALD deposition and O2 plasma treatment. Post deposition annealing was performed under N2H2 forming gas.
5：Data Analysis Methods:
XPS spectra were analyzed using the CasaXPS fitting program with a Gaussian-Lorentzian convolution and Shirley-type background.
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