研究目的
Investigating the interface structures of CdO thin films on (001)-MgO and (0001)-Al2O3 substrates to understand the epitaxial growth mechanisms and the formation of misfit dislocations and rotation variants.
研究成果
High quality epitaxial growth of CdO is achievable on both MgO and Al2O3 substrates despite significant lattice or symmetry mismatch. For CdO on MgO, dislocation networks form at interface planes, and strain fields overlap in thin films. For CdO on Al2O3, three in-plane rotational variants form due to the symmetry of the sapphire surface.
研究不足
The study is limited to the characterization of CdO thin films on MgO and Al2O3 substrates. The molecular dynamics simulations may not fully capture all aspects of the experimental conditions due to simplifications in the model.
1：Experimental Design and Method Selection:
Aberration corrected scanning transmission electron microscopy (STEM) was used to characterize the interface structures of CdO thin films on MgO and Al2O3 substrates. Molecular dynamics simulations were employed to examine the stresses in CdO/MgO heterostructures.
2：Sample Selection and Data Sources:
CdO films were grown on (001)-oriented MgO substrates with oxide molecular beam epitaxy and on c-Al2O3 substrates with reactive DC magnetron sputtering.
3：List of Experimental Equipment and Materials:
FEI Quanta 3D FEG for focused ion beam preparation, FEI Titan G2 60-300 kV for STEM, and modified version of DL_POLY Classic for molecular dynamics simulations.
4：Experimental Procedures and Operational Workflow:
Cross sections were prepared for STEM using a focused ion beam with final thinning at 2 kV. LAADF STEM was performed to increase sensitivity to defects and strain. GPA was used to measure local strain.
5：Data Analysis Methods:
Geometric phase analysis (GPA) was performed using the FRWRtools plugin to analyze strain. Virial stress analysis was used to evaluate stress from molecular dynamics simulations.
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