1：Experimental Design and Method Selection:

The study employed electron beam lithography for pre-structuring oxidized Si(111) substrates, followed by selective growth of topological insulators (Sb2Te3 and Bi2Te3) via molecular beam epitaxy to form nanodots. Scanning electron microscopy and focused ion beam cross-sectioning were used for morphological and depth profile analysis. Magnetotransport measurements were conducted to study phase-coherent transport properties.

2：Sample Selection and Data Sources:

Highly n-doped Si(111) substrates covered with 100 nm SiO2 were used. The diameter of the nanodots varied between 90 and 130 nm, with layouts including isolated single dots and arrays up to 50×50 dots.

3：List of Experimental Equipment and Materials:

Equipment included an electron beam lithography system, reactive ion etching (RIE) setup, molecular beam epitaxy (MBE) system, scanning electron microscope (SEM), focused ion beam (FIB) system, and a 4He cryostat for transport measurements.

4：Experimental Procedures and Operational Workflow:

The process involved substrate preparation, patterning, etching, MBE growth of TI materials, SEM and FIB analysis, and magnetotransport measurements at 1.5 K.

5：5 K. Data Analysis Methods:

5. Data Analysis Methods: Conductance modulations were analyzed using fast Fourier transform (FFT) to identify phase-coherent loops. Temperature-dependent measurements were used to study the suppression of conductance fluctuations.