研究目的
To measure the electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing temperatures and analyze the inhomogeneous barrier and phase composition.
研究成果
The 500 ?C annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC Schottky rectifier for high-temperature application. The appearance of W2C at high annealing temperature leads to more patches with lower barrier height, resulting in a high degree of inhomogeneity of the barrier.
研究不足
The study is limited to the analysis of W/4H-SiC Schottky contacts and does not explore other materials or configurations. The effects of annealing temperature on the properties of W/SiC Schottky contact are investigated, but other factors influencing the Schottky contact properties are not considered.
1：Experimental Design and Method Selection:
The electrical characteristics were measured using current–voltage–temperatures (I–V –T) and capacitance–voltage–temperatures (C–V –T) techniques. Tung’s model was applied to evaluate the degree of inhomogeneity.
2：Sample Selection and Data Sources:
4H n-type epitaxial wafers with a carrier concentration ND =
3：08 × 1015 cm?3 and a thickness of 18 μm were used. List of Experimental Equipment and Materials:
Agilent 1500B source meter unit for I–V and C–V measurements, e-beam evaporation for W layer deposition, and rapid thermal annealing (RTA) for thermal treatments.
4：Experimental Procedures and Operational Workflow:
The wafers were treated with standard RCA cleaning steps, followed by sacrificial oxidation and etching. Ohmic contact was produced by Ni film deposition and RTA. W layer was deposited and Schottky contacts were formed by photolithography. Samples were annealed at different temperatures.
5：Data Analysis Methods:
The values of n, ΦB, and Rs were calculated using a method developed by Cheung and Cheung. XRD analyses were carried out to identify formed phases.
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