研究目的
Investigating the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) grown by Metalorganic Chemical Vapor Deposition (MOCVD) for high-speed phase change memories.
研究成果
The functional analysis of In-doped Sb NW-based PCM devices gave promising results in terms of power consumption and, in particular, of operational speed, in comparison to the usually employed Ge-Sb-Te alloys for PCM. These findings advance the understanding of Sb-based PCM alloys and of the effects of downscaling to 1-dimensional geometries on the PCM functioning mechanisms. They also contribute to the implementation of innovative nanostructures into the next generation of highly dense and highly performing PCM devices.
研究不足
The studied NWs were not coated by a protective layer during the electrical measurements, which resulted in a limited number of cycles, before the device failed, likely as a consequence of evaporation during the reset operation.
1:Experimental Design and Method Selection:
The self-assembly of the NWs was performed with an Aixtron AIX 200/4 MOCVD reactor, exploiting the VLS mechanism induced by Au metal-catalyst nanoparticles (NPs). The morphology, microstructure, and composition of the NWs were characterized by SEM, XRD, HRTEM, and EDX microanalysis. For the electrical characterization, the NWs were transferred onto insulating substrates and the two-terminal devices fabrication was completed by EBL, evaporation of a Ni (20 nm)/Au (100 nm) stack and lift-off. The electrical measurements were performed by the Transmission Line Pulse (TLP) technique using a HPPI? system.
2:Sample Selection and Data Sources:
The Au NPs were dispersed from a colloidal solution by British Bio Cell Company ? on single-crystal Si (111) and Si (100), (1 × 1) cm2 substrates, after removal of the Si native oxide by immersion in a HF 5% solution.
3:List of Experimental Equipment and Materials:
Aixtron AIX 200/4 MOCVD reactor, SEM, XRD, HRTEM, EDX microanalysis, EBL, Ni (20 nm)/Au (100 nm) stack, HPPI? system for TLP technique.
4:Experimental Procedures and Operational Workflow:
The NWs were grown on substrates prepared with 20 nm Au NPs, leading to the growth of thin and slightly tapered NWs, with an In-doped Sb shaft and a Te-rich base. The electrical measurement set-up consisted of a 50 Ω high voltage pulse generator, a high speed digital oscilloscope and a Source Meter Unit (SMU).
5:Data Analysis Methods:
The read operation of the device state was performed by direct current (d.c.) measurements at 0.02 V after each pulse, using the switch configuration with the SMU.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容