研究目的
Investigating the fabrication and characterization of semiconducting Cu-doped AlOx films using drop-photochemical deposition method to control the conductivity and conduction type of aluminum oxide.
研究成果
Cu-doped AlOx films fabricated by d-PCD showed p-type conductivity with resistivity of the order of 108 Ωcm. The p-n junction between non-doped and Cu-doped AlOx exhibited rectification, demonstrating that the conductivity and conduction type of aluminum oxide can be controlled by Cu doping.
研究不足
The resistivity of the Cu-doped AlOx films was high (of the order of 108 Ωcm), and the dependence of resistivity on Cu content was not clearly understood. The excessive Cu doping did not enhance p-type conductivity.
1：Experimental Design and Method Selection:
The drop photochemical deposition (d-PCD) method was used to fabricate Cu-doped AlOx films. The films were annealed at 400oC for 60 min.
2：Sample Selection and Data Sources:
Films were deposited onto fluorine-doped-tin oxide (FTO) coated glass and alkali-free glass substrates.
3：List of Experimental Equipment and Materials:
An ultra-high-pressure mercury lamp with 500 mW/cm2 irradiation power, JEOL JAMP 9500F Auger microprobe, JASCO U-570 UV/VIS/NIR spectrometer, and ABET technologies 10500 solar simulator were used.
4：Experimental Procedures and Operational Workflow:
The deposition solution was dropped onto the substrate, irradiated with UV light, washed, dried, and the process was repeated 10 times. After deposition, films were annealed.
5：Data Analysis Methods:
AES for compositional analysis, SEM for surface morphology, UV/VIS/NIR spectrometer for optical transmittance, and I-V measurement for electrical properties.
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