研究目的
Investigating the linearity of silicon-based modulators for analog and RF applications by utilizing the interplay between plasma dispersion effect and DC Kerr effect.
研究成果
The study demonstrates that a ring modulator with DC Kerr phase shifter can achieve a third-order SFDR as high as 103.6 dB. Hz2/3, offering low insertion loss and low junction capacitance for lower power consumption and high bandwidth.
研究不足
The cancellation of IMD3 is very sensitive to any deviation from the optimal bias point. The quality factor of the ring limits the bandwidth.
1：Experimental Design and Method Selection:
The study involves designing a silicon ring modulator with a DC Kerr phase shifter to achieve linear phase shift versus voltage.
2：Sample Selection and Data Sources:
A 140 μm long p-i-n junction phase shifter embedded inside an add-drop racetrack ring resonator is used.
3：List of Experimental Equipment and Materials:
Equipment includes a tunable laser, Fiber-V groove arrays, a bias-T, a 50 Ω GS probe, and an external photodiode.
4：Experimental Procedures and Operational Workflow:
The device is tested by injecting two RF signal tones and measuring the output electrical signal with a spectrum analyzer.
5：Data Analysis Methods:
The optimal operating point is determined by maximizing the ratio of the fundamental tone and IMD3.
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