研究目的

Investigating the combination of semiconducting and magnetic properties within the same material for potential applications in spintronics.

研究成果

Oxide doped with transition metal and/or nonmagnetic elements can exhibit ferromagnetism above room temperature, but there are still many open questions regarding the origin of the observed ferromagnetism. Structural defects play a crucial role for room-temperature ferromagnetism in these oxide ferromagnetic semiconductors, regardless of the existence of free carriers. Establishing accurate correlations between defects and ferromagnetism is greatly needed for understanding the origin of ferromagnetic behaviors in these systems.

研究不足

The origin of ferromagnetism in DMS systems is not yet well understood, with unresolved questions regarding whether the observed FM originates from uniformly distributed TM ions in the host matrix or due to the precipitation of secondary phases such as metallic clusters. The paper also highlights the challenges in achieving high Curie temperature ferromagnetism in a single phase DMS and the need for nonequilibrium sample preparation techniques.