研究目的
Investigating the fabrication and properties of VOx microbolometers on Si3N4/SiO2 membranes for improved sensitivity in THz-detectors.
研究成果
The fabrication of VOx microbolometers on Si3N4/SiO2 membranes using Deep-RIE and XeF2 vapor etching achieved a high DC sensitivity of 2310 W-1, significantly higher than on substrates or dielectric materials, indicating a promising direction for THz-detector development.
研究不足
The study focuses on the fabrication and initial evaluation of VOx microbolometers on membranes, with potential for further optimization in etching processes and material properties for higher sensitivity and reproducibility.
1：Experimental Design and Method Selection:
Fabrication of VOx thin films on Si3N4/SiO2/Si substrates by metal-organic decomposition (MOD) and realization of a membrane by dry etching using Deep-RIE and XeF2 vapor etching.
2：Sample Selection and Data Sources:
Si3N4/SiO2/Si substrates and VOx thin films fabricated by MOD.
3：List of Experimental Equipment and Materials:
Metal-organic solution (V-02), spin-coater, Deep-RIE system, XeF2 vapor etching system, photolithography equipment, Ar+ ion milling system.
4：Experimental Procedures and Operational Workflow:
Spin-coating, prebaking, firing, photolithography, ion milling, Deep-RIE etching, XeF2 vapor etching.
5：Data Analysis Methods:
Measurement of X-ray diffraction, R-T characteristics, and calculation of DC sensitivity.
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