研究目的
Investigate the load fluctuation of an isolated DC-DC converter with the class Phi-2 inverter circuit using GaN-HFET, operated at 13.56 MHz.
研究成果
The isolated DC-DC converter with the class Phi-2 inverter circuit using GaN-HFET can operate at 13.56 MHz with robust characteristics in load fluctuation, showing very fast response and stability. The circuit is effective for various load conditions and can be applied to many industrial devices.
研究不足
The class Phi-2 inverter requires tuning of some circuit parameters depending on the load and power, and has fixed duty ratio and switching frequency. Proper operation at light load is difficult in experimental circuits.
1：Experimental Design and Method Selection:
Designed the class Phi-2 inverter circuit from references, focusing on achieving soft switching and reducing voltage stress by injecting third harmonics.
2：Sample Selection and Data Sources:
Used GaN-HFET for high frequency operation and designed circuit parameters for isolated DC-DC converter.
3：List of Experimental Equipment and Materials:
Included inductors, capacitors, transformers, and GaN-HFETs with specified parameters.
4：Experimental Procedures and Operational Workflow:
Demonstrated operation under various load conditions and load fluctuation during operation.
5：Data Analysis Methods:
Analyzed output power ratio, output voltage ratio, and power conversion efficiency under different load conditions.
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