研究目的
Demonstrating ambipolar carrier transport in an optically controllable organic field-effect transistor using a benzothienothiophene-substituted diarylethene (BTT-DAE) thin film as the transistor channel.
研究成果
The study successfully demonstrated ambipolar carrier transport in a DAE transistor with a BTT-DAE film as the transistor channel. The light-triggered on/off ratio reached 240 for p-type operation and >25 for n-type operation, comparable to gate-voltage-driven ratios. These findings have the potential to lead to new optoelectronic devices.
研究不足
The drain currents were suppressed at low drain voltages, and apparent hysteresis was observed during n-type operation, indicating the presence of a carrier injection barrier and defects near the interface between the insulating layer and the DAE film.
1：Experimental Design and Method Selection:
The study employed a top-contact and bottom-gate-type transistor with a BTT-DAE thin film as the transistor channel. The photoisomerization of BTT-DAE was induced by UV and VIS light irradiation to switch between semiconductor and insulator states.
2：Sample Selection and Data Sources:
BTT-DAE thin films were grown on a highly doped p+-Si (001) substrate with a 200-nm-thick SiO2 layer, modified with a 10-nm-thick PMMA layer.
3：List of Experimental Equipment and Materials:
A vacuum deposition system, xenon lamp for UV and VIS light irradiation, semiconductor device analyzer (Agilent B1500A), and Au electrodes for source and drain.
4：Experimental Procedures and Operational Workflow:
The BTT-DAE films were irradiated with UV or VIS light to induce photoisomerization. The transistor properties were evaluated under vacuum conditions.
5：Data Analysis Methods:
The carrier mobilities and threshold voltages were calculated from the slope and intercept of the square root of the drain current using a standard equation for saturated drain current.
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