研究目的
Investigating the ultrafast and multilevel switching capabilities of yttrium iron garnet (YIG)-based resistive random access memory (RRAM) on n-Si substrate for next-generation nonvolatile memory applications.
研究成果
The Au/YIG/n-Si RRAM cells exhibit reliable multilevel control with ultrafast operation speeds, high off/on resistance ratios, and excellent retention properties, making them promising candidates for next-generation nonvolatile memory applications.
研究不足
The study demonstrates the potential of YIG-based RRAM for ultrafast multilevel memory applications, but further research is needed to optimize the device performance, especially at higher temperatures and to achieve even faster switching speeds with higher pulse amplitudes.
1：Experimental Design and Method Selection:
The study involved the fabrication of Au/YIG/n-Si RRAM cells and the investigation of their resistive switching behaviors under DC voltage sweeps and ultrafast pulse operations.
2：Sample Selection and Data Sources:
YIG films were grown on n-type Si (100) substrates using pulsed laser deposition.
3：List of Experimental Equipment and Materials:
Equipment included a pulsed laser deposition system, X-ray diffractometer, scanning electron microscope, atomic force microscope, X-ray photoelectron spectroscope, and various electrical measurement devices.
4：Experimental Procedures and Operational Workflow:
The YIG film was characterized for its structural and chemical properties, followed by the fabrication of RRAM cells and the measurement of their electrical properties under different conditions.
5：Data Analysis Methods:
The switching dynamics were analyzed using physics-based analytical models to describe the voltage-dependent switching time.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
X-ray Photoelectron Spectroscope
ESCALAB 250
Thermo-VG Scientific
Analysis of chemical bonding states of the YIG film.
-
Source-Meter
Keithley 2410
Tektronix
Measurement of current–voltage characteristics and resistances.
-
Pulsed Laser Deposition System
KrF laser, 248 nm
Used for growing YIG films on n-type Si substrates.
-
X-ray Diffractometer
Philips X’Pert Pro
Characterization of the crystal structures of the YIG film.
-
Scanning Electron Microscope
FEI SIRION200
Determination of the thickness of YIG film.
-
Atomic Force Microscope
Measurement of the surface roughness of the YIG film.
-
Signal Generator
Keithley 3401
Application of pulsed voltages for testing.
-
Pulse Generator
Tektronix PSPL 10300B
Application of ultrafast pulsed voltages for testing.
-
Cryostat Cell
Linkam, TMS94, LNP94/2
Control of sample temperature during testing.
-
登录查看剩余7件设备及参数对照表
查看全部
