研究目的
Analyzing the phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using various technologies for the production of ultrahigh-frequency InAlN/GaN HEMT transistors.
研究成果
Thin films of InxAl1–xN alloys are a promising material for electronic and optoelectronic devices despite the difficulties of their growing. The undoped layers of InxAl1–xN demonstrate an n-type conductivity with the concentration of free electrons that depends on the molar fraction of InN in the composition of alloy.
研究不足
The thermodynamic instability of the solutions of nitride compounds and the complexity of growing high-quality ternary solid solutions due to the mismatch of lattice parameters.
