研究目的
Investigating the effects of annealing on the structural, optical, and electrical properties of TiN thin films.
研究成果
Annealing TiN thin films at 600 °C and 700 °C affects their structural parameters, leading to changes in optical and electrical properties. The grain size increases, and the absorption coefficient and electrical resistivity decrease with annealing.
研究不足
The study is limited to the effects of annealing at 600 °C and 700 °C on TiN thin films. The findings may not be directly applicable to films annealed at other temperatures or to films with different compositions or deposition methods.
1：Experimental Design and Method Selection:
DC reactive sputtering was used to deposit TiN thin films on Si (100) substrates. The films were then annealed at 600 °C and 700 °C in nitrogen ambient and vacuum furnace, respectively. Structural, optical, and electrical properties were characterized using RBS, XRD, TEM, spectroscopic ellipsometry, and four-point probe method.
2：Sample Selection and Data Sources:
TiN thin films of 240 nm thickness were deposited on p-type (100) Si wafers.
3：List of Experimental Equipment and Materials:
Balzers II Sputtron system for sputtering, Philips PW1050 diffractometer for XRD, JEOL 100CX and Philips CM30 electron microscopes for TEM, Horiba JOBIN Yvon spectroscopic ellipsometer for optical properties, and a four-point probe for electrical characterization.
4：Experimental Procedures and Operational Workflow:
Films were deposited, annealed, and then characterized using the aforementioned techniques to study the effects of annealing.
5：Data Analysis Methods:
RBS spectra were analyzed using the Data Furnace Code, XRD data was analyzed for lattice constant and grain size using Scherrer’s equation, and optical data was analyzed for absorption coefficient.
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JEOL 100CX electron microscope
100CX
JEOL
Used for transmission electron microscopy analysis.
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Balzers II Sputtron system
Balzers
Used for DC reactive sputtering of TiN thin films.
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Philips PW1050 diffractometer
PW1050
Philips
Used for X-ray diffraction analysis.
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Philips CM30 electron microscope
CM30
Philips
Used for transmission electron microscopy analysis.
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Horiba JOBIN Yvon spectroscopic ellipsometer
Horiba JOBIN Yvon
Used for optical properties investigation.
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Four point probe
Used for electrical characterization.
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