研究目的
To improve the saturation mobility of ZnO-based TFTs at low temperature process for next generation display technology.
研究成果
The double active layer IZO:N/IZTO TFTs exhibited superior electrical performance at a low annealing temperature of 325?°C, with high saturation mobility, suitable threshold voltage, and good on/off ratio, making them promising for next-generation display technologies.
研究不足
The annealing temperature, though lower than previous studies, may still be a constraint for certain industrial applications. The study focuses on electrical performance and transparency but may not address all aspects of durability and long-term stability.
1：Experimental Design and Method Selection:
Bottom-gate top-contact TFTs with a double active layer of IZO:N/IZTO were prepared using RF magnetron sputtering at room temperature.
2：Sample Selection and Data Sources:
Heavily doped p-Si substrates with a 200-nm-thick SiO2 gate insulator layer were used.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system, UV–Vis spectrophotometer, X-ray diffraction (XRD) equipment, Keithley 4200-SCS for electrical characterization.
4：Experimental Procedures and Operational Workflow:
Deposition of IZO:N and IZTO thin films, annealing in pure oxygen atmosphere, deposition of Al source/drain electrodes.
5：Data Analysis Methods:
Electrical characteristics were analyzed using Keithley 4200-SCS, transmittance spectra by UV–Vis spectrophotometer, and crystallinity by XRD.
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