研究目的
Investigating the utilization of molybdenum disulfide-graphene (MoS2-Gr) hybrid field effect transistor (FET) as photosensor.
研究成果
The study demonstrates that MoS2-Gr hybrid FET exhibits high photoresponsivity (3.34×103 AW-1) and external quantum efficiency (1.8×104), making it a promising candidate for high-performance photosensing applications. The methodology of fabricating TMDCs-Gr based hybrid devices opens new avenues for advances in efficient photosensor technology.
研究不足
The study focuses on the optical performance of MoS2-Gr hybrid FET under specific conditions (DUV exposure with intensity and wavelength of 11 W/cm2). Potential areas for optimization include exploring other TMDCs and Gr combinations for enhanced performance.
1：Experimental Design and Method Selection:
The study investigates the photo-electrical characteristics of MoS2-Gr hybrid FET. The optical performance of hybrid FET was evaluated upon DUV exposure with intensity and wavelength of 11 W/cm
2：Sample Selection and Data Sources:
A thin Gr film was grown on the copper (Cu) using chemical vapor deposition (CVD) technique.
3：List of Experimental Equipment and Materials:
CVD apparatus, Argon flow, hydrogen gas, CH4, silicon substrate, polymethyl methacrylate (PMMA), ammonium persulfate (APS) solution, de-ionized water, acetone solution, Renishaw Micro-Spectrometer, DUV lamp.
4：Experimental Procedures and Operational Workflow:
Gr film growth on Cu using CVD, transfer to silicon substrate using wet transfer, Raman characterization, photo-electrical characteristics investigation.
5：Data Analysis Methods:
Calculation of photoresponsivity (R(cid:2)) and external quantum efficiency (EQE).
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