研究目的
Investigating the development and application of tunable acid-resistant Zr-doped indium oxide (ZrInO) semiconductor material for back-channel-etched thin-film transistors (TFTs).
研究成果
The developed ZrInO semiconductor with tunable acid resistance has a good prospect for the channel layer of BCE-TFTs, exhibiting excellent electrical characteristics and high optical transmittance.
研究不足
The relatively poor electrical stability can be attributed to the absorption/desorption of H2O and O2 molecules effect on the back-channel surface. No added passivation layer on the back channel for ZrInO-TFTs.
1：Experimental Design and Method Selection:
Development of ZrInO semiconductor material with tunable acid resistance. Fabrication of BCE-TFTs using ZrInO as the active layer.
2：Sample Selection and Data Sources:
ZrInO thin films with different compositions were prepared and characterized.
3：List of Experimental Equipment and Materials:
Atomic force microscopy (AFM), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), ultraviolet fluorescence spectrometer, semiconductor parameter analyzer.
4：Experimental Procedures and Operational Workflow:
Fabrication of ZrInO-TFTs array on glass substrate, including deposition and patterning of Al-Nd thin film, anodization process for Al2O3:Nd dielectric film, deposition and patterning of ZrInO thin film, and deposition and patterning of Mo thin film.
5：Data Analysis Methods:
Electrical measurements and characterization of ZrInO-TFTs performance.
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Atomic force microscopy
Veeco-DI/MultiMode
Veeco
Characterization of surface morphology and structure of ZrInO thin films.
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Transmission electron microscopy
FEI Titan Themis 200
FEI
Characterization of ZrInO thin films.
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Field emission scanning electron microscopy
Hitachi S-4800
Hitachi
Characterization of ZrInO thin films.
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Ultraviolet fluorescence spectrometer
Shimadzu, UV-3600
Shimadzu
Analysis of optical properties of ZrInO thin films.
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Semiconductor parameter analyzer
Agilent 4155C
Agilent
Electrical measurements of ZrInO-TFTs.
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X-ray diffraction
Philips X pert pro M
Philips
Analysis of crystal structures of ZrInO thin films.
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