研究目的
To study the effects of plasma treatment on flat band voltage (Vfb) and equivalent oxide thickness (EOT) using Metal-organic Chemical Vapor Deposition (MOCVD) TiN film as p-MOSFETs metal gate electrode.
研究成果
Plasma treatment of MOCVD TiN films favors the formation of Ti-N bonds, decreases Ti-C bonds, and increases PMOS Vfb shift. However, it also accelerates interfacial oxide formation, increasing EOT. The work function and EOT are influenced by the thickness of TiN and plasma treatment conditions, with a critical thickness for work function stabilization.
研究不足
The study focuses on the effects of plasma treatment on MOCVD TiN films for p-MOSFETs metal gate electrodes, with potential limitations in applicability to other materials or configurations. The optimization of plasma treatment conditions for maximum Vfb shift and minimal EOT increase may require further investigation.
1：Experimental Design and Method Selection:
The study involved the deposition of MOCVD-TiN films under varying conditions including growth time, plasma treatment time, and power. The effects on film properties were analyzed.
2：Sample Selection and Data Sources:
Blanket MOCVD TiN films were deposited and analyzed for sheet resistance, film properties, and MOS capacitor structures were fabricated for Vfb and EOT extraction.
3：List of Experimental Equipment and Materials:
Endura? 5500 tool by Applied Materials, Inc., X-Ray Photoelectron Spectrometer (XPS), Atomic Force Microscope (AFM), X-Ray Diffraction (XRD), Keithley 4200-SCS analyzer, High Resolution Transmission Electron Microscopy (HRTEM).
4：Experimental Procedures and Operational Workflow:
MOCVD TiN deposition at 400 ± 2°C, plasma treatment with H2/N2 gases, fabrication of MOS capacitors, and measurement of C-V characteristics.
5：Data Analysis Methods:
Analysis of film resistance, composition, and physical properties using XPS, AFM, XRD, and HRTEM.
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Keithley 4200-SCS analyzer
4200-SCS
Keithley
Measurement of C-V characteristics
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Endura? 5500
5500
Applied Materials, Inc.
Deposition of MOCVD-TiN films
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X-Ray Photoelectron Spectrometer
Analysis of film composition
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Atomic Force Microscope
Analysis of film surface roughness
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X-Ray Diffraction
Analysis of film crystallinity
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High Resolution Transmission Electron Microscopy
Characterization of physical properties
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