研究目的
To discuss the historical progression of MBE of Ga2O3, from early work on amorphous films for III-V MOS gate dielectrics, to the heteroepitaxy of Ga2O3, to the homoepitaxy of Ga2O3 on native, free-standing substrates.
研究成果
Substantial progress has been made in the epitaxial growth of several phases of Ga2O3. MBE is a compelling technique for understanding and controlling the growth of Ga2O3, with the power of the technique expected to continue to increase as our understanding grows.
研究不足
The MBE growth of Ga2O3 is still in its infancy with relatively low growth rates. The complexity and cost of MBE can make other growth techniques more appealing depending on the intended application. The existence of multiple phases in the Ga2O3 family presents a materials complication but also opens up opportunities for device design.
1：Experimental Design and Method Selection:
The chapter discusses the MBE growth of Ga2O3, focusing on the use of effusion cells, ultrahigh vacuum (UHV) chamber, ultrahigh-purity source materials, and reflection high-energy electron diffraction (RHEED) for in situ characterization and growth optimization.
2：Sample Selection and Data Sources:
The growth of Ga2O3 on various substrates such as sapphire (Al2O3), SiC, MgO, and MgAl2O4 is discussed, highlighting the importance of substrate orientation and preparation.
3：List of Experimental Equipment and Materials:
MBE system with effusion cells, UHV chamber, RHEED, substrates like β-Ga2O3, sapphire, SiC, MgO, and MgAl2O
4：Experimental Procedures and Operational Workflow:
The chapter details the substrate cleaning, growth temperature optimization, and the effect of Ga and oxygen flux on the growth rate and film quality.
5：Data Analysis Methods:
Characterization techniques include RHEED for in situ monitoring, AFM for surface roughness, and XRD for phase identification.
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