研究目的
Investigating the growth and electron mobility of an inverted InAs/GaSb quantum well structure.
研究成果
The study concludes that the electron mobility of the inverted InAs/GaSb QW is smaller than that of the non-inverted QW for a wide range of temperature due to larger electron effective mass caused by the special energy band structure of the inverted QW.
研究不足
The study is limited by the availability of semi-insulating GaSb substrate for direct measurement of electron mobility of the inverted QW structure. The electron mobility behavior of the inverted structure cannot be fully explained by the interface roughness scattering theory alone.
1：Experimental Design and Method Selection:
The inverted InAs/GaSb QW sample is grown by molecular beam epitaxy (MBE) using As and Sb crackers with the InSb-like layers employed as the interface materials for the sake of the strain compensation.
2：Sample Selection and Data Sources:
Two groups of samples were fabricated: one group is an inverted QW structure grown on GaSb substrate, and another group is grown on a semi-insulating GaAs substrate for electron mobility measurement.
3：List of Experimental Equipment and Materials:
High-resolution X-ray diffractometer for structural characterization and standard van der Pauw method for Hall measurements.
4：Experimental Procedures and Operational Workflow:
The structural characterization was performed using high-resolution X-ray diffractometer. The electrical properties were performed by Hall measurements using the standard van der Pauw method.
5：Data Analysis Methods:
The electron mobility was analyzed as a function of temperature and well width.
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