研究目的
Investigating the epitaxial growth of nonpolar a-plane Mg-doped p-type AlxGa1-xN/GaN superlattices with enhanced hole concentration.
研究成果
The nonpolar a-plane p-Al0.3Ga0.7N/GaN superlattices were successfully grown with MOCVD technology, achieving improved surface morphology and hole concentration through the use of AlGaN buffer layers with graded Al composition and Mg-δ-doping process. The study demonstrates the potential for enhancing the performance of nonpolar AlGaN-based UV-LEDs.
研究不足
The study focuses on nonpolar a-plane p-type AlGaN/GaN superlattices and may not be directly applicable to other orientations or materials. The improvements in surface morphology and carrier concentration are significant but may still be limited by intrinsic material properties and growth conditions.
1：Experimental Design and Method Selection:
The nonpolar p-AlxGa1-xN/GaN SL samples were grown on r-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technology. The study involved the use of AlGaN buffer layers with uniform or graded Al composition and Mg-δ-doping techniques.
2：Sample Selection and Data Sources:
Samples A, B, and C were prepared with different buffer layers and doping methods to investigate their effects on the properties of the superlattices.
3：List of Experimental Equipment and Materials:
MOCVD system, atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Hall effect measurements were used for characterization.
4：Experimental Procedures and Operational Workflow:
The growth process included nitridation treatment, deposition of AlN interlayer, growth of AlGaN buffer layer, deposition of p-type AlxGa1-xN/GaN SL, and a thin Mg-heavily-doped GaN cap layer. Samples were annealed and Ni/Ag electrodes were deposited for Hall measurements.
5：Data Analysis Methods:
The structural and electrical properties were analyzed using AFM, XRD, SEM, and Hall effect measurements.
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