摘要： Copper oxide is a semiconducting compound with a narrow band gap and is used for photoconductive and photothermal applications. Most of the synthesis methods for the preparation of copper oxide composite materials either are unsuitable for mass fabrication or inevitably introduce unwanted impurities. In this work, we report on the synthesis of copper oxide composite materials by the arc discharge method with a pure copper rod as the anode and graphite as the cathode. Ion beam analysis techniques, particle-induced X-ray emission and Rutherford backscattering spectrometry were used to probe the impurities in the copper oxide composites. Ion beam analysis results revealed copper and oxygen as constituent elements with no impurities. X-ray diffraction results discovered the presence of CuO, Cu2O and Cu phases in the composite materials. The morphology of the as-synthesized copper oxide was studied by scanning electron microscopy. Results clearly demonstrated that spherical particles were obtained with an average diameter of 14 μm (range 2–85 μm), 35 μm (range 20–100 μm) and 50 μm (range 30–120 μm) for the arc current of 60 A, 80 A and 95 A, respectively. It was found that the morphology can be controlled by the arc discharge parameters, e.g. a lower arc discharge current contributed to a smaller particle size. This is because the electric arc current influences the nucleation and the growth of the spherical structures. Due to its simplicity of synthesis, the proposed arc discharge is a promising technique for the fabrication of copper oxide composite materials for optical and electrical applications.