研究目的
Investigating the correct application of the Tauc plot to determine the band gap energy of modified semiconductor photocatalysts based on UV?Vis spectra.
研究成果
The study demonstrates that the Tauc method's direct application can lead to incorrect band gap energy estimates for modified semiconductors. A more accurate approach involves subtracting the spectrum of the modifying component or using a baseline method to account for sub-band gap absorption.
研究不足
The direct application of the Tauc method is inappropriate for materials showing considerable absorbance at energies below the band gap, such as defected, doped, or surface-modified materials, leading to inaccurate band gap estimations.
1：Experimental Design and Method Selection:
The study uses the Tauc method to estimate the band gap energy from optical absorption spectra, addressing its misuse in modified semiconductors.
2：Sample Selection and Data Sources:
The model system methyl orange/titanium dioxide (MO/TiO2) is used, with spectra recorded using a UV?vis?NIR spectrophotometer.
3：List of Experimental Equipment and Materials:
UV-3600 Shimadzu spectrophotometer equipped with a 15 cm integrating sphere, barium sulfate (BaSO4) as a reference.
4：Experimental Procedures and Operational Workflow:
Reflectance spectra were collected in the spectral range 250?800 nm, with samples rotated to different positions for each measurement.
5：Data Analysis Methods:
The Kubelka?Munk function was applied to transform reflectance spectra into absorption spectra for Tauc plot analysis.
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