研究目的
Investigating the effect of active layer thickness on dynamic threshold voltage (VTH) operation for double-gate (DG) (a-IGZO) thin-film transistors (TFTs).
研究成果
Increasing the TG bias tends to decrease the VTH of the BG-sweep TFTs. With 80-nm-thick a-IGZO layers, VTH shows linear dependence on VTG with two slopes for VTG > 0 V and VTG < 0 V, and SS changes. With thinner a-IGZO layer (20 nm), a single linear relationship between VTH and VTG is observed, and no obvious SS change is found.
研究不足
The study is limited to the effects of active layer thickness on dynamic VTH modulation in DG a-IGZO TFTs, without exploring other potential influencing factors.
