研究目的
Investigating the effects of different doping methods on the properties of Top-Gate IGZO TFT, including electrical uniformity and stability.
研究成果
Doping the active layer with N2O and the S/D with Al significantly improves the electrical uniformity and stability of Top-Gate IGZO TFTs. Optimizing doping methods can lead to devices with excellent electrical properties and uniformity, suggesting potential for further improvements in Top-Gate IGZO TFT performance.
研究不足
The study does not explore the long-term stability of the doped devices under operational conditions beyond 2000 seconds. Additionally, the effects of doping concentrations and other potential dopants are not fully investigated.
1：Experimental Design and Method Selection:
The study involved doping the active layer of Top-Gate IGZO TFT with N2O, N2, or O2 and the S/D with He, Ar, Al, or SiNx to observe their effects on the device's properties.
2：Sample Selection and Data Sources:
Glass substrates of 730mm x 920mm x
3：5mm were used in a Gen 5 system. List of Experimental Equipment and Materials:
Molybdenum (Mo) for light shield layer, SiOx buffer layer, IGZO active layer, SiOx as gate insulating layer, Al/Mo as gate layer, and Mo/Al/Mo for S/D electrodes.
4：Experimental Procedures and Operational Workflow:
The process included depositing and patterning layers, doping, and measuring electrical properties.
5：Data Analysis Methods:
Electrical properties were measured using Agilent B1505A, with analysis focusing on mobility, subthreshold swing, threshold voltage, and stability under bias.
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