研究目的
To study silicon detector surface preparation methods such as ion implant parameters, and the addition of a quantum 2D superlattice, to produce fast detectors that are highly sensitive to shallowly absorbed radiation.
研究成果
The study demonstrated improved detector sensitivity to shallowly absorbed radiation by varying ion implant parameters and by utilizing a 2D superlattice structure to reduce surface recombination. The greatest effect was observed by omitting the ion implant and using the superlattice alone to form the junction contact, which still allowed for nanosecond time response in detectors ~200 μm in size.
研究不足
The study is limited by the need for sufficiently high conductivity to transport charge carriers to the external circuit without generating large voltage transients at the detector surface, especially important in high-flux environments in pulsed power applications.
1：Experimental Design and Method Selection:
The study involved varying ion implant parameters and utilizing a 2D superlattice structure to reduce surface recombination. The key metric was low-energy electron responsivity, probing critical depth regions from ~5 to 1000 nm. Optical responsivity measurements were also presented to confirm the validity of the effect.
2：Sample Selection and Data Sources:
Custom-fabricated frontside-illuminated photodiodes were used, with some devices undergoing superlattice deposition steps and others not.
3：List of Experimental Equipment and Materials:
Devices were fabricated at Sandia’s Microsystems & Engineering Sciences Applications (MESA) facility, with some sent to NASA’s Jet Propulsion Laboratory (JPL) for superlattice structure growth by Molecular Beam Epitaxy (MBE).
4：Experimental Procedures and Operational Workflow:
Devices were tested for electron responsivity using a Scanning Electron Microscope (SEM) and a Keithley 2450 Source Measurement Unit (SMU). Visible and near UV wavelength quantum efficiency was measured in a photovoltaic test cell.
5：Data Analysis Methods:
Electron responsivity data were converted to internal quantum efficiency, and dead layer was estimated using electron energy deposition profiles simulated with PENELOPE.
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