摘要： High-temperature (high-Tc) superconductivity in cuprates arises from carrier doping of an antiferromagnetic Mott insulator. This carrier doping leads to the formation of electronic liquid-crystal phases. The insulating charge-stripe crystal phase is predicted to form when a small density of holes is doped into the charge-transfer insulator state, but this phase is yet to be observed experimentally. Here, we use surface annealing to extend the accessible doping range in Bi-based cuprates and realize the lightly doped charge-transfer insulating state of the cuprate Bi2Sr2CaCu2O8+x. In this insulating state with a charge transfer gap on the order of ~1 eV, our spectroscopic imaging scanning tunnelling microscopy measurements provide strong evidence for a unidirectional charge-stripe order with a commensurate 4a0 period along the Cu–O–Cu bond. Notably, this insulating charge-stripe crystal phase develops before the onset of the pseudogap and formation of the Fermi surface. Our work provides fresh insight into the microscopic origin of electronic inhomogeneity in high-Tc cuprates.