研究目的
To study the effects of initial surface conditions on interface characteristics of Al2O3/GeOx/Ge gate stacks for high mobility Ge based CMOS applications.
研究成果
The study demonstrates the importance of initial Ge surface conditions prior to ALD in the Al2O3/GeOx/Ge gate stack, showing significant reductions in Qf and Dit with the insertion of an epi-Ge layer and GeOx IL by PPO. These improvements are promising for high mobility Ge based CMOS applications.
研究不足
The study focuses on the initial surface conditions and their effects on interface characteristics, but does not explore the long-term stability or scalability of the fabricated MOS structures for industrial applications.
1：Experimental Design and Method Selection:
The study investigates the effects of initial surface conditions on interface characteristics by evaluating fixed charge density (Qf) and interface trap density (Dit) through C-V characteristics and conductance method.
2：Sample Selection and Data Sources:
Three types of Ge MOS capacitors were fabricated with different surface conditions prior to ALD.
3：List of Experimental Equipment and Materials:
p-Ge substrates, NH4OH solution, HF, ALD chamber, MBE chamber, Al2O3, Al gate electrodes.
4：Experimental Procedures and Operational Workflow:
Chemical cleaning, ALD of Al2O3, MBE for epitaxial Ge growth, plasma post-oxidation, post-deposition annealing, and Al gate electrode deposition.
5：Data Analysis Methods:
C-V and G-V measurements, conductance method for Dit evaluation, and SRCC method for impedance correction.
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