摘要： The development of THz technologies (communication, imaging, spectroscopy etc.) requires the design of materials for high-speed modulation of radiation in THz range. For such applications, the thin films based on oxides showed a metal-insulator transition (MIT) are interesting due to large different of optical transmittance before and after critical point. Among the oxide materials with MIT vanadium dioxide, which has a transition temperature the closest to the room temperature (68oC for bulk samples), is of particular interest, with the MIT characterized by a record speed (<1 ps) and a large amplitude (a change in the conductivity is 105 times for single crystals). It is known that the MIT transition in VO2 is accompanied by a first-order phase transition, while the crystalline structure from the monoclinic (crystal type MoO2) with the properties of the semiconductor transforms into a tetragonal (rutile type) with metallic conductivity. The electronic transition in the vanadium dioxide can be caused by the temperature, the electric field and laser radiation. A set of these unique properties makes vanadium dioxide a promising key component of optoelectronic devices (switches, modulators, lenses, etc.) for the THz range controlled by thermal action, electric voltage or laser pulse.