研究目的
Investigating the effects of microstructure fabrication processes on the properties of CVD graphene using Raman spectroscopy.
研究成果
The study demonstrated that compressive stress induced by photoresist baking is reversible and that indirect electron beam irradiation does not significantly affect graphene quality. Direct metal deposition causes electronic modulation due to sp2 C-C bond weakening, while thin metal oxide films protect graphene from such modulations. The fabrication processes did not significantly increase the overall disorder level in graphene.
研究不足
The study focused on CVD graphene and may not be directly applicable to other forms of graphene. The Van der Waals interaction between graphene and the substrate was weaker than the tensile stress applied during the lift-off process, leading to some graphene sections peeling off.
1：Experimental Design and Method Selection:
The study utilized Raman spectroscopy to analyze the effects of various fabrication processes on CVD graphene.
2：Sample Selection and Data Sources:
Four samples of CVD graphene were prepared, each undergoing different fabrication processes.
3：List of Experimental Equipment and Materials:
Equipment included a HORIBA Jobin Yvon LabRAM HR 800 Raman spectrometer, e-beam evaporation technique, and molecular beam epitaxy (MBE) system. Materials included MMA, PMMA, TiOx/Al2O3, Py, and Co.
4：Experimental Procedures and Operational Workflow:
Processes included photoresist baking, e-beam lithography, metal or dielectric deposition, and lift-off. Raman spectra were measured between each process step.
5：Data Analysis Methods:
Raman peaks were analyzed for shifts and intensity ratios to assess structural and electronic modulations.
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