研究目的
To propose a simple and fast method of extracting contact resistance in metal oxide thin-film transistors (MOTFTs) through the I-V characteristics and to develop a DC drain current model considering contact resistance.
研究成果
The proposed method provides a simple, fast, and accurate way to extract contact resistance in MOTFTs, which depends on Vg, Vd, and L. The developed DC drain current model considering contact resistance accurately describes the measurements of MOTFTs with different channel lengths.
研究不足
The method assumes that contact effects are negligible in long channel transistors and is validated for specific conditions. The accuracy of the method may vary with different materials or device structures.
1：Experimental Design and Method Selection:
The study proposes a physical-based straightforward extraction technique for contact resistance in MOTFTs, dividing the channel into contact and intrinsic parts and assuming line injection for electrons at the source side.
2：Sample Selection and Data Sources:
The method requires only two measurements, assuming that contact effects are negligible in long channel transistors. It can be applied to high Vds.
3：List of Experimental Equipment and Materials:
Agilent B1500A was used for measuring the transfer characteristics of a-IZO TFTs with different channel lengths.
4：Experimental Procedures and Operational Workflow:
The contact voltage is calculated, and the contact resistance is analytically obtained. The method is validated through comparisons with numerical results and measurements.
5：Data Analysis Methods:
The relationship between contact resistance and other parameters such as Vg, Vd, and L is analyzed, and an empirical model of Rc is obtained.
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