研究目的
Investigating the vertical leakage mechanisms in carbon (C)-doped AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon wafers and developing an analytical model of dislocation-mediated vertical leakage.
研究成果
The study concludes that the vertical leakage in AlGaN/GaN HEMTs is characterized by the Poole–Frenkel conduction mechanism, with a trap activation energy of 0.61 eV. An empirical relation between trap activation energy and dislocation density is proposed, predicting the dislocation-mediated vertical leakage current density. The findings are expected to aid in the development of high-breakdown GaN-on-silicon epilayers for power electronics.
研究不足
The study focuses on C-doped AlGaN/GaN HEMTs on silicon wafers, and the findings may not be directly applicable to other doping types or substrates. The analytical model simplifies the differentiation between screw, edge, and mixed components of threading dislocations.
1：Experimental Design and Method Selection:
The study involved temperature-dependent I–V measurements and band diagram analysis to identify the Poole–Frenkel (P–F) type of conduction mechanism.
2：Sample Selection and Data Sources:
The samples were AlGaN/GaN HEMTs grown on 6-inch silicon wafers using metal–organic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
The electrical characterization was done using Agilent Semiconductor Device Analyzer B1500, and high-voltage measurements were performed using Keithley System 2657A.
4：7A. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The device fabrication included patterning for ohmic contact, surface cleaning, e-beam evaporation of the ohmic metal stack, and annealing. Vertical leakage measurements were performed with aluminum metal as a back contact.
5：Data Analysis Methods:
The data was analyzed using P–F fitting to estimate trap activation energy and to understand the dependence of leakage current on dislocation density.
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