研究目的
To introduce an instrument used to measure both stresses and cracks in silicon based materials for electronic packaging, improving the resolution and stability of stress measurement.
研究成果
The auto infrared photoelastic microscope introduced in this paper has a computer-controlled automatic operation mode and satisfies the requirements for fully automatic stress detection of silicon-based materials. It works as non-contact, full-field measurement, high accuracy, and small volume, and has a significant application prospect in the semiconductor industry's defects and stress measurement.
研究不足
The microscopical function limits the maximum work field to 1 mm × 1 mm, making typical verifications like four point bend experiment and diametrical compression unrealistic to carry out.
1：Experimental Design and Method Selection:
The instrument was built as a microscope based on infrared photo elasticity with automatic rotation of optical devices.
2：Sample Selection and Data Sources:
Silicon-based materials for electronic packaging were used as specimens.
3：List of Experimental Equipment and Materials:
Includes an infrared light source, frosted glass, polarizer, quarter wave plates, a 2-D linear motor driven scanner flat, high-accuracy rotary motors, a CCD camera, and an objective lens.
4：Experimental Procedures and Operational Workflow:
The system was calibrated, and specimens were measured under different conditions, including temperature cycling.
5：Data Analysis Methods:
The six-step phase shift method was used to calculate phase differences and directions of the first principle stress.
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