摘要： We demonstrate sol–gel-processed Mg-doped In2O3 thin film transistors (TFTs) with high performance and improved stability. To improve the performance of indium oxide, which is unstable at a high negative threshold voltage, magnesium is used to suppress oxygen vacancy formation. As the Mg doping concentration increases, the oxygen deficiencies and OH impurities decrease, resulting in a positive shift in the threshold voltage and improved stability in negative bias stress environments. In this experiment, Mg-doped (0 to 2 wt%) indium oxide TFTs are fabricated. Indium oxide prepared from a synthesized solution of an indium nitrate hydrate precursor and 2-methoxyethanol has a mobility of 17.2 cm2/V s. In2O3 TFTs doped with 1 wt% Mg also show a high mobility of 11.02 cm2/V s and a noticeable ?1.5 V threshold voltage shift under negative bias stress. Our results suggest that the sol–gel-processed Mg-doped In2O3 TFTs are a promising candidate for use in high-stability and high-performance applications in transparent devices.