1：Experimental Design and Method Selection:

The study employed periodic AlGaN/GaN heterostructures with multiple 2DEG channels to reduce the RON and VF. 3D tri-anode and tri-gate electrodes were implemented to contact and control the multi-channels.

2：Sample Selection and Data Sources:

The multi-channel AlGaN/GaN heterostructure consisted of 5 parallel 2DEG channels, each composed of 10 nm AlGaN barrier, 1 nm AlN spacer and 10 nm GaN channel layers.

3：List of Experimental Equipment and Materials:

The heterostructure was grown on Si substrate with a 4.3 μm-thick buffer layer. The anode region was selectively patterned into fins with designed height of 200 nm and width of 50 nm, using Ar/Cl2-based inductively coupled plasma etching.

4：3 μm-thick buffer layer. The anode region was selectively patterned into fins with designed height of 200 nm and width of 50 nm, using Ar/Cl2-based inductively coupled plasma etching. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: The tri-anode contacts the multi-channels through the fin sidewalls, resulting in a small VON. The tri-gate/tri-anode regions shield the sidewall Schottky junction from the high electric fields under large reverse biases to reduce IR.

5：Data Analysis Methods:

The performance of the multi-channel tri-gate SBDs was analyzed in terms of RON, VF, IR, and VBR, and compared with counterpart single-channel devices.