研究目的
Investigating the effect of thickness and oxygen ratio control in RF magnetron sputtering on the performance of MgZnO thin-film transistors.
研究成果
The optimized parameters for MgZnO TFTs were a 10 nm channel thickness and a 14% oxygen-flow ratio, resulting in improved device performance with a field-effect mobility of 5.65 cm2/V · s and a current-switch ratio over five orders of magnitude.
研究不足
The study is limited by the specific conditions of RF sputtering and the range of thicknesses and oxygen-flow ratios tested. Potential areas for optimization include exploring a wider range of conditions and alternative materials for the dielectric layer.
1：Experimental Design and Method Selection:
The study used RF-magnetron sputtering to fabricate MgZnO TFTs, focusing on the influence of film thickness and oxygen-flow ratio on device characteristics.
2：Sample Selection and Data Sources:
MgZnO films with varying thicknesses (10-20 nm) and oxygen-flow ratios (0%-21%) were prepared on quartz substrates with aluminum bottom gates and SiO2 insulator layers.
3：List of Experimental Equipment and Materials:
Equipment included a PECVD for SiO2 deposition, RF-magnetron sputtering system for MgZnO channel layer, and a B1500 semiconductor parameter analyzer for I-V measurements.
4：Experimental Procedures and Operational Workflow:
The process involved depositing aluminum gates, SiO2 insulator layers, MgZnO channel layers with controlled thickness and oxygen-flow ratios, annealing, and electrode deposition.
5：Data Analysis Methods:
The performance of TFTs was analyzed using transfer characteristics, field-effect mobility, threshold voltage, subthreshold swing, and current-switch ratio measurements.
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