研究目的
Investigating the design, fabrication, and high-frequency characterization of GeTe phase change material-based DPDT switch matrices for RF switching applications.
研究成果
The GeTe-based DPDT switch matrices demonstrated reasonable insertion loss and good isolation in the amorphous state, with measurements aligning well with EM simulations. These devices are promising for relay replacement due to their bi-stability and non-volatile nature.
研究不足
The study is limited by the availability of sub-micron lithography in the laboratory, which could improve the Figure of Merit (FOM) of the switches. Additionally, the performance of the switches at frequencies above 20 GHz was not explored.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of GeTe-based RF switches and their integration into DPDT matrices. Theoretical models and EM simulations were used to predict performance.
2：Sample Selection and Data Sources:
High resistivity silicon substrates were used for fabricating the switches. Data was collected using a Rohde & Schwarz vector network analyzer.
3：List of Experimental Equipment and Materials:
Equipment includes a PECVD system for silicon nitride deposition, PLD for GeTe layer deposition, and electron beam evaporation for metal deposition. Materials include GeTe, molybdenum, silicon nitride, and gold.
4：Experimental Procedures and Operational Workflow:
The fabrication process involved deposition and patterning of layers, followed by high-frequency electrical characterization.
5：Data Analysis Methods:
S-parameters were measured and compared with EM simulations to evaluate switch performance.
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