研究目的
To investigate the effect of the electric contact on the device performance of SWCNT TFTs employing the suitable work function material and to demonstrate low-voltage operating SWCNT TFTs on flexible polyimide substrates with reduced electric contacts.
研究成果
SWCNT-TFTs with high work function MoOx contact exhibited improved device performance, including increased on-state current and linear field-effect mobility, compared to conventional Pd contact. The improvement is attributed to the thinning of the Schottky barrier width for hole injection due to the difference in work function. The study successfully demonstrated high-performance low-voltage operating SWCNT-TFTs with reduced electric contacts on flexible substrates.
研究不足
The study did not employ an additional buffer film on the flexible substrate, which is commonly used to improve device performance. The challenges in improving the device performance of SWCNT-TFTs by optimizing the fabrication process and device configuration were noted.
1：Experimental Design and Method Selection:
The study utilized bottom-gate top-contact SWCNT-TFTs with solution-processed random networks of SWCNT film as an active channel on PI substrates, employing Pd and MoOx as S/D contacts.
2：Sample Selection and Data Sources:
The SWCNT suspension used was 95% semiconducting-enriched with a diameter range of
3：2–7 nm and a length range of 300 nm. List of Experimental Equipment and Materials:
Equipment included an atomic force microscopy (AFM) for morphological characterization and a 4155B semiconductor parameter analyzer for electrical characteristics measurement. Materials included PI substrate, ZrO2 as gate dielectric, and SWCNT suspension.
4：Experimental Procedures and Operational Workflow:
The fabrication involved spin-coating PI substrate, depositing gate electrode and dielectric, functionalizing the surface with PLL, drop-casting SWCNT suspension, and depositing S/D contacts.
5：Data Analysis Methods:
The contact resistance was extracted using the transmission line method by plotting the width-normalized resistance as a function of channel length.
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