研究目的
To investigate the resistive-switching behaviour and properties of Bi-doped SrTiO3 ?lms with different device structures for non-volatile memory applications.
研究成果
The doping of Bi enhances the RHRS/RLRS of the SrTiO3 ?lms, and Si substrates improve the endurance and retention characteristics of the Sr0.92Bi0.08TiO3 ?lms. The Ag/Sr0.92Bi0.08TiO3/Si device shows the best performance for non-volatile memory applications.
研究不足
The study focuses on the resistive-switching properties of Bi-doped SrTiO3 ?lms with specific device structures, and the findings may not be generalizable to other materials or structures. The endurance and retention characteristics could be further optimized.
1：Experimental Design and Method Selection:
The sol–gel method was used to fabricate SrTiO3 and Bi-doped SrTiO3 ?lms on different substrates (Si and Pt).
2：Sample Selection and Data Sources:
Films were deposited on Si and Pt/Ti/SiO2/Si substrates.
3：List of Experimental Equipment and Materials:
X-ray diffraction (XRD; AXS D8-ADVANCE, Bruker), scanning electron microscope (SEM; Hitachi S4800), Keithley 2400 Source Meter.
4：Experimental Procedures and Operational Workflow:
Films were prepared by spin coating, preheating, and annealing. Top Ag electrodes were deposited by vacuum evaporation.
5：Data Analysis Methods:
I–V characteristics were measured to evaluate resistance switching memory effects.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
