研究目的
To present a commercial or industrial view of III–V compact models for circuit design, contrasting the requirements of III–V modeling to those of silicon, and discussing the challenges and opportunities for the III–V modeling community.
研究成果
The major differences in III–V compact models compared to silicon are driven by the applications the technologies are used for, the largely captive nature of III–V design, and suitability/availability of the models in tools product designers use. Standardized compact models are common in silicon but not as commonplace in III–V HEMTs due to the value/leverage they give to foundry providers.
研究不足
The paper does not provide specific experimental procedures or data analysis methods, focusing instead on a comparative analysis of modeling approaches and requirements.
