研究目的
Investigating the UV sensitivity of polycrystalline zinc selenide thin films prepared by chemical bath deposition technique and the effect of isochronal annealing on the UV sensitivity of the material.
研究成果
The study reveals high UV sensitivity of polycrystalline ZnSe thin films, with the photocurrent to dark current ratio decreasing sharply upon annealing. The decrease is attributed to changes in grain geometry, band gap energy, and grain boundary charge density. The as-deposited sample shows the highest UV sensitivity due to its higher band gap energy and grain boundary trap charge density.
研究不足
The study is limited to polycrystalline ZnSe thin films prepared by chemical bath deposition technique and the effect of open air isochronal annealing on their UV sensitivity. The findings may not be directly applicable to other forms of ZnSe or different deposition techniques.
1:Experimental Design and Method Selection:
Thin films of ZnSe are deposited on glass by chemical bath deposition method. The chemical bath is prepared using zinc acetate dehydrate, sodium selenosulphate, ammonium hydroxide, hydrazine hydrate, and sodium hydroxide.
2:Sample Selection and Data Sources:
Samples are isochronally annealed in open air at various temperatures. The surface morphologies of the samples are examined with SEM.
3:List of Experimental Equipment and Materials:
Zeiss EVO MA10 scanning electron microscope (SEM), JEOL JSM-7600F field emission scanning electron microscope, Keithley 485 autoranging picoammeter, 6 W UV lamp, Cary 5000 UV–VIS-NIR spectrophotometer.
4:Experimental Procedures and Operational Workflow:
The deposition process is continued for 2 h, and the deposited film is taken out of the solution, rinsed in distilled water, and dried naturally. The samples are annealed at different temperatures.
5:Data Analysis Methods:
The optical absorption spectra of the samples were measured and used to obtain the band gap energies of the material.
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