研究目的
To investigate the effect of microwave annealing on the reliability characteristics of amorphous IGZO thin film transistors (TFTs), focusing on improving device reliability through microwave annealing parameters adjustment.
研究成果
Microwave annealing improves the reliability characteristics of a-IGZO TFTs, with optimal conditions reducing trap density and oxide charge creation rates, and increasing characteristic trapping time. The study demonstrates the potential of microwave annealing as a cost-effective method to enhance device reliability.
研究不足
The study notes that excessive microwave energy absorption can lead to subthreshold swing characteristic degeneration, potentially due to thermal injury at the metal/IGZO interface. Optimal microwave annealing conditions are crucial to avoid such degradation.
1：Experimental Design and Method Selection:
The study employs microwave annealing to improve the reliability of a-IGZO TFTs, focusing on the effect of different annealing conditions on device characteristics.
2：Sample Selection and Data Sources:
TFT devices without backchannel passivation are fabricated on n-type silicon wafers, with LaAlO3/ZrO2 as gate dielectric and a-IGZO as the active channel layer.
3：List of Experimental Equipment and Materials:
Equipment includes an E-gun Evaporation System for gate dielectric deposition, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) for a-IGZO layer formation, and a Thermal Coater Evaporation for Al source/drain electrodes.
4：Experimental Procedures and Operational Workflow:
The annealing process involves microwave system energy delivery, N2 gas pre-purge, and microwave power application. Electrical properties are measured post-annealing.
5：Data Analysis Methods:
The study analyzes threshold voltage shift, subthreshold swing, and trap density under positive bias stress, fitting data with a stretched-exponential model.
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