研究目的
Investigating the effect of YON interfacial passivation layer on the HfO2/Ge interface for better interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor.
研究成果
The YON IPL fabricated by sputtering Y target in Ar+N2 to deposit YN first followed by annealing in N2+O2 to convert YN to YON could suppress the formation of Ge oxide in the interface more efficiently to achieve more excellent interfacial and electrical properties.
研究不足
The study focuses on the comparison of two methods for preparing YON IPL and their effects on the HfO2/Ge interface, but does not explore other potential IPL materials or methods.
1：Experimental Design and Method Selection:
Two different methods were used to prepare YON, one by sputtering Y2O3 target in Ar+N2, and the other by sputtering Y target in Ar+N2 followed by annealing in N2+O2 to convert YN to YON.
2：Sample Selection and Data Sources:
N-type (100) Ge wafers with a resistivity of
3：02 ~ 1 Ω·cm were used. List of Experimental Equipment and Materials:
Sputter chamber, HP4284A precision LCR meter, HP4156A semiconductor parameter analyzer, Thermo VG Multilab 2000 photoelectron spectrometer, Atomic force microscopy (AFM).
4：Experimental Procedures and Operational Workflow:
Cleaning Ge wafers, depositing YON or YN and HfO2 layers, post-deposition annealing, evaporating and patterning Al as gate electrode, forming-gas annealing.
5：Data Analysis Methods:
Capacitance-voltage (C-V) and gate leakage current density versus gate voltage (Jg–Vg) characteristics measurement, X-ray photoelectron spectroscopy (XPS) analysis, AFM surface morphology check.
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