研究目的
Investigating the design and performance of a monolithically integrated bidirectional GaN HEMT for reduced conduction losses in power electronic applications.
研究成果
The monolithically integrated bidirectional GaN HEMT demonstrates similar switching and on-state behavior to conventional unidirectional devices, with significantly reduced conduction losses. Future work should focus on optimizing the bulk potential connection and integrating driver stages for improved performance.
研究不足
The study is limited by the complexity of the PCB design for bidirectional devices, which affects the parasitic inductance of the commutation loop. Additionally, the dynamic on-state resistance is influenced by thermal and trapping effects, which could be further optimized.
1：Experimental Design and Method Selection:
The study involves the design and characterization of a monolithically integrated bidirectional GaN HEMT, comparing its performance with conventional unidirectional GaN HEMTs.
2：Sample Selection and Data Sources:
GaN HEMTs with a gate width of 891 μm were processed using a GaN-on-Si technology platform.
3：List of Experimental Equipment and Materials:
The study utilized a double-pulse switching test setup for dynamic characterization, including PCB-submounts for device attachment.
4：Experimental Procedures and Operational Workflow:
The devices were characterized under various load currents and DC-link voltages to evaluate switching behavior and dynamic on-state resistance.
5：Data Analysis Methods:
The analysis included measuring transient drain-source voltage waveforms and calculating averaged on-state resistances under different conditions.
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